发明申请
US20160322568A1 N-Doped Semiconducting Material Comprising Phosphine Oxide Matrix and Metal Dopant
审中-公开
包含磷化氢基质和金属掺杂剂的N掺杂半导体材料
- 专利标题： N-Doped Semiconducting Material Comprising Phosphine Oxide Matrix and Metal Dopant
- 专利标题（中）： 包含磷化氢基质和金属掺杂剂的N掺杂半导体材料
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申请号： US15107456申请日： 2014-12-23
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公开(公告)号： US20160322568A1公开(公告)日： 2016-11-03
- 发明人: Omrane Fadhel , Carsten Rothe , Jan Birnstock , Ansgar Werner , Kai Gilge , Jens Angermann , Mike Zöllner , Francisco Bloom , Thomas Rosenow , Tobias Canzler , Tomas Kalisz , Ulrich Denker
- 申请人： NOVALED GMBH
- 优先权： EP13199413.9 20131223; EP14171326.3 20140605
- 国际申请： PCT/EP2014/079191 WO 20141223
- 主分类号： H01L51/00
- IPC分类号： H01L51/00 ; H01L51/56 ; C07F9/53 ; H01L51/50
摘要：
The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.
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