公开(公告)号：US20230422603A1

公开(公告)日：2023-12-28

申请号：US18252916

申请日：2021-11-12

申请人： Novaled GmbH

发明人： Vladimir Uvarov ,  Markus Hummert ,  Thomas Rosenow ,  Steffen Runge ,  Regina Luschtinetz ,  Oliver Langguth ,  Jens Angermann

IPC分类号： H10K85/60 ,  C07C311/48 ,  C07C317/32

CPC分类号： H10K85/60 ,  C07C311/48 ,  C07C317/32 ,  H10K50/17

摘要： The present invention relates to an organic electronic device comprising a semiconductor layer which comprises a compound of formula (1).

公开(公告)号：US20240298524A1

公开(公告)日：2024-09-05

申请号：US18631712

申请日：2024-04-10

申请人： Novaled GmbH

发明人： Omrane Fadhel ,  Carsten Rothe ,  Jan Birnstock ,  Ansgar Werner ,  Kai Gilge ,  Jens Angermann ,  Mike Zöllner ,  Francisco Bloom ,  Thomas Rosenow ,  Tobias Canzler ,  Tomas Kalisz ,  Ulrich Denker

IPC分类号： H10K85/60 ,  C07F9/53 ,  C07F9/572 ,  C07F9/58 ,  C07F9/64 ,  C07F9/655 ,  C07F9/6558 ,  C08K5/5397 ,  H10K50/165 ,  H10K59/32 ,  H10K71/00 ,  H10K71/30 ,  H10K102/00

CPC分类号： H10K85/60 ,  C07F9/5329 ,  C07F9/5728 ,  C07F9/58 ,  C07F9/64 ,  C07F9/65522 ,  C07F9/65527 ,  C07F9/65583 ,  H10K50/165 ,  H10K71/00 ,  H10K71/30 ,  H10K85/615 ,  C08K5/5397 ,  H10K59/32 ,  H10K2102/00

摘要： The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

公开(公告)号：US20160322568A1

公开(公告)日：2016-11-03

申请号：US15107456

申请日：2014-12-23

申请人： NOVALED GMBH

发明人： Omrane Fadhel ,  Carsten Rothe ,  Jan Birnstock ,  Ansgar Werner ,  Kai Gilge ,  Jens Angermann ,  Mike Zöllner ,  Francisco Bloom ,  Thomas Rosenow ,  Tobias Canzler ,  Tomas Kalisz ,  Ulrich Denker

IPC分类号： H01L51/00 ,  H01L51/56 ,  C07F9/53 ,  H01L51/50

CPC分类号： H01L51/005 ,  C07F9/5329 ,  C07F9/5728 ,  C07F9/58 ,  C07F9/64 ,  C07F9/65522 ,  C07F9/65527 ,  C07F9/65583 ,  C08K5/5397 ,  H01L27/3209 ,  H01L51/002 ,  H01L51/0052 ,  H01L51/5076 ,  H01L51/56 ,  H01L2251/301

摘要： The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

摘要翻译： 本发明涉及一种电掺杂半导体材料，其包含至少一种金属元素作为n掺杂剂和至少一种包含至少一种氧化膦基团的电子传输基质化合物，其制备方法和包含电掺杂 半导体材料。

公开(公告)号：US20230217677A1

公开(公告)日：2023-07-06

申请号：US17912675

申请日：2021-03-19

申请人： Novaled GmbH

发明人： Moo Jin Park ,  Thomas Rosenow ,  Regina Luschtinetz ,  Vladimir Uvarov ,  Jens Angermann ,  Kai Gilge ,  Steffen Runge ,  Annette Steudel

IPC分类号： H10K50/17 ,  H10K50/818 ,  H10K50/11 ,  H10K85/60 ,  H10K85/30

CPC分类号： H10K50/17 ,  H10K50/11 ,  H10K50/818 ,  H10K85/30 ,  H10K85/371 ,  H10K85/381 ,  H10K85/631 ,  H10K85/633 ,  H10K85/636 ,  H10K85/6572 ,  H10K85/6574 ,  H10K2102/103

摘要： The present invention relates to an organic electronic device comprising a substrate (110), an anode layer (120), a cathode layer (190), at least one first emission layer (150), and a hole injection layer (130), wherein • - the hole injection layer comprises a metal complex, wherein • - the metal complex comprises at least one electropositive metal atom having an electro-negativity value according to Allen of less than 2.4, and • - the metal complex comprises at least one anionic ligand comprising at least 4 covalently bound atoms; • - the anode layer comprises a first anode sub-layer (121) and a second anode sub-layer (122), wherein • - the first anode sub-layer comprises a first metal having a work function in the range of > 4 and

公开(公告)号：US20210202842A1

公开(公告)日：2021-07-01

申请号：US17185901

申请日：2021-02-25

申请人： Novaled GmbH

发明人： Omrane Fadhel ,  Carsten Rothe ,  Jan Birnstock ,  Ansgar Werner ,  Kai Gilge ,  Jens Angermann ,  Mike Zöllner ,  Francisco Bloom ,  Thomas Rosenow ,  Tobias Canzler ,  Tomas Kalisz ,  Ulrich Denker

IPC分类号： H01L51/00 ,  H01L51/50 ,  C07F9/53 ,  C07F9/6558 ,  C07F9/64 ,  C07F9/655 ,  C07F9/572 ,  C07F9/58 ,  H01L51/56

摘要： The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.