Invention Application
- Patent Title: Methods of Forming Conductive and Insulating Layers
-
Application No.: US15202349Application Date: 2016-07-05
-
Publication No.: US20160329310A1Publication Date: 2016-11-10
- Inventor: HeeJo Chi , HanGil Shin , KyungMoon Kim
- Applicant: STATS ChipPAC Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L25/10
- IPC: H01L25/10 ; H01L23/538 ; H01L23/31 ; H01L21/56 ; H01L23/00 ; H01L23/498

Abstract:
Methods of forming conductive and insulating layers for semiconductor devices and packages. Substrate is provided with integrated circuit device and interconnect structure mounted thereon, the interconnect structure adjacent the integrated circuit device. The integrated circuit device and portions of the interconnect structure can be covered with an encapsulation exposing a portion of the interconnect structure. Conductive material is formed over the exposed portion of the interconnect structure by a depositing process followed by a heating process to alter the chemical properties of the conductive material. Optionally, a dispersing process may be incorporated.
Public/Granted literature
- US09865575B2 Methods of forming conductive and insulating layers Public/Granted day:2018-01-09
Information query
IPC分类: