Invention Application
US20160336075A1 NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
审中-公开
非易失性存储器件和包括其的存储器系统
- Patent Title: NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
- Patent Title (中): 非易失性存储器件和包括其的存储器系统
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Application No.: US15094089Application Date: 2016-04-08
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Publication No.: US20160336075A1Publication Date: 2016-11-17
- Inventor: Chang-Hyun LEE
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2015-0066529 20150513
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/14

Abstract:
A nonvolatile memory device includes a memory cell array and a voltage generator. The memory cell array includes a plurality of planes, and each plane receives one of a first ground selection voltage and a second ground selection voltage. The voltage generator is configured to provide selectively one of the first ground selection voltage and the second ground selection voltage independently to each of the planes based on a result of an erase verification operation on each of the plurality of planes.
Public/Granted literature
- US09672932B2 Nonvolatile memory device and memory system including the same Public/Granted day:2017-06-06
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