Invention Application
- Patent Title: BULK FIN FORMATION WITH VERTICAL FIN SIDEWALL PROFILE
- Patent Title (中): 具有垂直锥形轮廓的大块熔体形成
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Application No.: US14712072Application Date: 2015-05-14
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Publication No.: US20160336347A1Publication Date: 2016-11-17
- Inventor: Kangguo Cheng , Hong He , Sivananda K. Kanakasabapathy , Chiahsun Tseng , Yunpeng Yin
- Applicant: International Business Machines Corporation
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/762 ; H01L21/02 ; H01L29/66 ; H01L21/308 ; H01L21/3065 ; H01L21/84 ; H01L21/311
Abstract:
Fabricating a semiconductor device includes providing a substrate, wherein the substrate is comprised of a base layer, a doped silicon layer on top of the base layer, and an undoped silicon layer on top of the doped silicon layer; forming a hard mask layer on top of the substrate; forming at least one mandrel on top of the hard mask layer; forming a spacer layer on top of exposed portions of the hard mask layer and the at least one mandrel; etching portions of the spacer layer; removing the at least one mandrel; etching regions of the hard mask layer and the undoped silicon layer not protected by remaining portions of the spacer layer to form at least one fin; and removing the remaining portions of the spacer layer.
Public/Granted literature
- US09515089B1 Bulk fin formation with vertical fin sidewall profile Public/Granted day:2016-12-06
Information query
IPC分类:
