发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US15224065申请日: 2016-07-29
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公开(公告)号: US20160336353A1公开(公告)日: 2016-11-17
- 发明人: Masayuki SAKAKURA , Shunpei YAMAZAKI
- 申请人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 优先权: JP2005-141132 20050513
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L29/786 ; G09G3/36 ; G02F1/1362 ; G09G3/20 ; H01L27/02 ; G02F1/1368
摘要:
An insulating film provided between adjacent pixels is referred to as a bank, a partition, a barrier, an embankment or the like, and is provided above a source wiring or a drain wiring for a thin film transistor, or a power supply line. In particular, at an intersection portion of these wirings provided in different layers, a larger step is formed there than in other portions. Even when the insulating film provided between adjacent pixels is formed by a coating method, thin portions are problematically partially formed due to this step and the withstand pressure is reduced. In the present invention, a dummy material is arranged near the large step portion, particularly, around the intersection portion of wirings, so as to alleviate unevenness formed thereover. The upper wiring and the lower wiring are arranged in a misaligned manner so as not to align the end portions.
公开/授权文献
- US09972646B2 Semiconductor device and manufacturing method of the same 公开/授权日:2018-05-15
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