发明申请
- 专利标题: PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE
- 专利标题(中): 光电转换元件和成像装置
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申请号: US15149469申请日: 2016-05-09
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公开(公告)号: US20160336363A1公开(公告)日: 2016-11-17
- 发明人: Koji DAIRIKI , Shunpei YAMAZAKI
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 优先权: JP2015-099011 20150514
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L29/04 ; H01L31/0224 ; H01L31/0272 ; H01L29/786
摘要:
A photoelectric conversion element includes a first electrode, a second electrode, a first layer, and a second layer. The first layer is provided between the first electrode and the second electrode. The second layer is provided between the first layer and the second electrode. The first layer contains selenium. The second layer contains In, Ga, Zn, and O. The second layer may contain an In—Ga—Zn oxide. The selenium may be crystalline selenium. The first layer functions as a photoelectric conversion layer. The second layer functions as a hole injection blocking layer. The In—Ga—Zn oxide may have a c-axis aligned crystal.
公开/授权文献
- US11728356B2 Photoelectric conversion element and imaging device 公开/授权日:2023-08-15
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