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公开(公告)号：US20160111451A1
公开(公告)日：2016-04-21
申请号：US14924100
申请日：2015-10-27
发明人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。
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公开(公告)号：US20130323912A1
公开(公告)日：2013-12-05
申请号：US13950957
申请日：2013-07-25
发明人： Tomoko TAMURA , Eiji SUGIYAMA , Yoshitaka DOZEN , Koji DAIRIKI , Takuya TSURUME
IPC分类号： H01L21/02
CPC分类号： H01L21/02381 , H01L21/84 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L2221/68359 , H01L2221/68368 , H01L2224/81001
摘要： A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.
摘要翻译： 形成在衬底上的释放层; 在剥离层上形成薄膜集成电路中的至少一个; 在薄膜集成电路中的至少一个上形成膜; 并通过使用蚀刻剂除去释放层; 因此，薄膜集成电路中的至少一个从基板剥离。 半导体器件通过层压等密封剥离的薄膜集成电路而形成。
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公开(公告)号：US20230350563A1
公开(公告)日：2023-11-02
申请号：US18212266
申请日：2023-06-21
IPC分类号： G06F3/0488 , G06F1/3234 , G06F3/041 , G06F3/0482
CPC分类号： G06F3/0488 , G06F1/3265 , G06F3/0412 , G06F3/0482 , G06F2203/04104 , G06F2203/04101 , G06F2203/04108 , Y02B70/10 , Y02D10/00 , G06F3/04817
摘要： A data processing device which includes a flexible position input portion for sensing proximity or a touch of an object such as a user's palm and finger. In the case where a first region of the flexible position input portion is held by a user for a certain period, supply of image signals to the first region is selectively stopped.
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公开(公告)号：US20220214789A1
公开(公告)日：2022-07-07
申请号：US17701953
申请日：2022-03-23
IPC分类号： G06F3/0488 , G06F1/3234 , G06F3/041 , G06F3/0482
摘要： A data processing device which includes a flexible position input portion for sensing proximity or a touch of an object such as a user's palm and finger. In the case where a first region of the flexible position input portion is held by a user for a certain period, supply of image signals to the first region is selectively stopped.
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公开(公告)号：US20180190677A1
公开(公告)日：2018-07-05
申请号：US15897318
申请日：2018-02-15
发明人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
IPC分类号： H01L27/12 , B23K26/073 , H01L21/02 , H01L21/20 , H01L21/3213 , H01L21/84 , H01L29/66 , H01L29/786
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
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6.发明申请IMAGE SENSOR, CAMERA, SURVEILLANCE SYSTEM, AND METHOD FOR DRIVING THE IMAGE SENSOR 有权图像传感器，摄像机，监视系统和驱动图像传感器的方法公开(公告)号：US20130222584A1
公开(公告)日：2013-08-29
申请号：US13772663
申请日：2013-02-21
发明人： Takeshi AOKI , Takayuki IKEDA , Yurika SATO , Koji DAIRIKI
CPC分类号： H04N5/335 , H04N5/23254 , H04N5/378 , H04N7/18
摘要： Provided is an image sensor having a pixel includes a photoelectric conversion element; a capacitor which is connected between the photoelectric conversion element; a reset circuit which resets a potential of a node between the photoelectric conversion element and the capacitor; an amplifier circuit which outputs a signal corresponding to the potential of the node; and a switch which controls electrical conduction between the amplifier circuit and a vertical signal line. When the node is brought into an electrically floating state, the potential of the optical signal is stored in the node in a state of being inverted. When an optical signal is detected while the potential is stored in the node, the potential of the node increases in accordance with an output potential of the photoelectric conversion element, and thus the potential of the node corresponds to a difference in potential between the optical signals in different light-receiving periods.
摘要翻译： 提供一种具有像素的图像传感器，包括光电转换元件; 连接在光电转换元件之间的电容器; 复位电路，其复位所述光电转换元件与所述电容器之间的节点的电位; 输出对应于该节点的电位的信号的放大器电路; 以及控制放大器电路和垂直信号线之间的导通的开关。 当节点处于电浮动状态时，光信号的电位以倒置的状态存储在节点中。 当在电位存储在节点中时检测到光信号时，节点的电位根据光电转换元件的输出电位而增加，因此节点的电位对应于光信号之间的电位差 在不同的光接收期。
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公开(公告)号：US20160336363A1
公开(公告)日：2016-11-17
申请号：US15149469
申请日：2016-05-09
发明人： Koji DAIRIKI , Shunpei YAMAZAKI
IPC分类号： H01L27/146 , H01L29/04 , H01L31/0224 , H01L31/0272 , H01L29/786
CPC分类号： H01L27/14607 , H01L27/1207 , H01L27/1225 , H01L27/14609 , H01L27/14627 , H01L27/14636 , H01L27/14665 , H01L27/14692 , H01L29/04 , H01L29/7869 , H01L31/0224 , H01L31/0272 , H01L31/109
摘要： A photoelectric conversion element includes a first electrode, a second electrode, a first layer, and a second layer. The first layer is provided between the first electrode and the second electrode. The second layer is provided between the first layer and the second electrode. The first layer contains selenium. The second layer contains In, Ga, Zn, and O. The second layer may contain an In—Ga—Zn oxide. The selenium may be crystalline selenium. The first layer functions as a photoelectric conversion layer. The second layer functions as a hole injection blocking layer. The In—Ga—Zn oxide may have a c-axis aligned crystal.
摘要翻译： 光电转换元件包括第一电极，第二电极，第一层和第二层。 第一层设置在第一电极和第二电极之间。 第二层设置在第一层和第二电极之间。 第一层含硒。 第二层包含In，Ga，Zn和O.第二层可以含有In-Ga-Zn氧化物。 硒可以是结晶硒。 第一层用作光电转换层。 第二层用作空穴注入阻挡层。 In-Ga-Zn氧化物可以具有c轴对准的晶体。
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8.发明申请公开(公告)号：US20150008321A1
公开(公告)日：2015-01-08
申请号：US14305173
申请日：2014-06-16
IPC分类号： G01N23/205 , H01J37/06 , G01N23/20
CPC分类号： G01N23/2055 , G01N23/20058 , G01N2223/61 , H01J37/06 , H01J2237/2065 , H01J2237/2805
摘要： Provided is a transmission electron diffraction measurement apparatus including an electron gun; a first optical system under the electron gun; a sample chamber under the first optical system; a second optical system under the sample chamber; an observation chamber under the second optical system; a region that emits light by receiving energy from an electron in the observation chamber; and a camera facing the region.
摘要翻译： 提供一种包括电子枪的透射电子衍射测量装置; 电子枪下的第一光学系统; 第一光学系统下的样品室; 样品室下方的第二光学系统; 第二光学系统下的观察室; 通过从观察室中的电子接收能量而发光的区域; 以及面向该地区的相机。
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公开(公告)号：US20200183561A1
公开(公告)日：2020-06-11
申请号：US16793034
申请日：2020-02-18
IPC分类号： G06F3/0488 , G06F1/3234
摘要： A data processing device which includes a flexible position input portion for sensing proximity or a touch of an object such as a user's palm and finger. In the case where a first region of the flexible position input portion is held by a user for a certain period, supply of image signals to the first region is selectively stopped.
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公开(公告)号：US20180157394A1
公开(公告)日：2018-06-07
申请号：US15874279
申请日：2018-01-18
IPC分类号： G06F3/0488 , G06F1/32
摘要： A data processing device which includes a flexible position input portion for sensing proximity or a touch of an object such as a user's palm and finger. In the case where a first region of the flexible position input portion is held by a user for a certain period, supply of image signals to the first region is selectively stopped.
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