Invention Application
- Patent Title: METHOD OF FORMING NITROGEN-DOPED POROUS GRAPHENE ENVELOPE
- Patent Title (中): 形成氮多孔多孔石墨的方法
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Application No.: US15165776Application Date: 2016-05-26
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Publication No.: US20160346769A1Publication Date: 2016-12-01
- Inventor: Hee-yeon KIM , Bo-yun JANG , Guk Hyeon KWON
- Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
- Applicant Address: KR Daejeon
- Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
- Current Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
- Current Assignee Address: KR Daejeon
- Priority: KR10-2015-0075097 20150528
- Main IPC: B01J27/24
- IPC: B01J27/24 ; H01M4/583 ; H01M4/36 ; H01M4/38 ; B01J23/755 ; B01J37/08
Abstract:
Disclosed is a method of forming a nitrogen-doped porous graphene envelope. The method of forming the nitrogen-doped porous graphene envelope includes dissolving a nitrogen precursor in an organic precursor and then vaporizing the resulting precursor to thus simultaneously synthesize the graphene envelope and perform nitrogen doping in a single step.
Public/Granted literature
- US09947926B2 Method of forming nitrogen-doped porous graphene envelope Public/Granted day:2018-04-17
Information query
