An integrated circuit device is provided as follows. A connection terminal is disposed on a first surface of a semiconductor structure. A conductive pad is disposed on a second surface, opposite to the first surface, of the semiconductor structure. A through-substrate-via (TSV) structure penetrates through the semiconductor structure. An end portion of the TSV structure extends beyond the second surface of the semiconductor structure. The conductive pad surrounds the end portion of the TSV structure. The connection terminal is electrically connected to the conductive pad through the TSV structure