Invention Application
US20160351490A1 CROSS-COUPLE IN MULTI-HEIGHT SEQUENTIAL CELLS FOR UNI-DIRECTIONAL M1
有权
用于单向M1的多重顺序细胞中的交叉耦合
- Patent Title: CROSS-COUPLE IN MULTI-HEIGHT SEQUENTIAL CELLS FOR UNI-DIRECTIONAL M1
- Patent Title (中): 用于单向M1的多重顺序细胞中的交叉耦合
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Application No.: US14723357Application Date: 2015-05-27
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Publication No.: US20160351490A1Publication Date: 2016-12-01
- Inventor: Mukul GUPTA , Xiangdong CHEN , Ohsang KWON
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/088

Abstract:
A MOS device includes first, second, third, and fourth interconnects. The first interconnect extends on a first track in a first direction. The first interconnect is configured in a metal layer. The second interconnect extends on the first track in the first direction. The second interconnect is configured in the metal layer. The third interconnect extends on a second track in the first direction. The third interconnect is configured in the metal layer. The second track is parallel to the first track. The third interconnect is coupled to the second interconnect. The second and third interconnects are configured to provide a first signal. The fourth interconnect extends on the second track in the first direction. The fourth interconnect is configured in the metal layer. The fourth interconnect is coupled to the first interconnect. The first and fourth interconnects are configured to provide a second signal different than the first signal.
Public/Granted literature
- US09640480B2 Cross-couple in multi-height sequential cells for uni-directional M1 Public/Granted day:2017-05-02
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