Invention Application
- Patent Title: Gallium Nitride Apparatus with a Trap Rich Region
- Patent Title (中): 具有陷阱丰富区域的氮化镓设备
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Application No.: US15165122Application Date: 2016-05-26
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Publication No.: US20160351666A1Publication Date: 2016-12-01
- Inventor: Shrenik Deliwala , James Fiorenza , Donghyun Jin
- Applicant: Analog Devices, Inc.
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/205 ; H01L21/02 ; H01L29/20
Abstract:
A method cold-melts a high conductivity region between a high-resistivity silicon substrate and a gallium-nitride layer to form a trap rich region that substantially immobilizes charge carriers in that region. Such a process should substantially mitigate the parasitic impact of that region on circuits formed at least in part by the gallium-nitride layer.
Public/Granted literature
- US09923060B2 Gallium nitride apparatus with a trap rich region Public/Granted day:2018-03-20
Information query
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