Invention Application
- Patent Title: READ AND WRITE APPARATUS AND METHOD FOR A DUAL PORT MEMORY
- Patent Title (中): 用于双端口存储器的读取和写入装置和方法
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Application No.: US14731319Application Date: 2015-06-04
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Publication No.: US20160358643A1Publication Date: 2016-12-08
- Inventor: Pramrod Kolar , Wei-Hsiang Ma , Gunjan H. Pandya
- Applicant: Intel Corporation
- Main IPC: G11C11/419
- IPC: G11C11/419
Abstract:
An apparatus is provided which comprises: a memory array; first logic to detect whether first and second word-lines (WL) for a row of the memory array are active; and second logic to deactivate one of the first and second WLs such that one of the first and second WLs is active for the row.
Public/Granted literature
- US09812189B2 Read and write apparatus and method for a dual port memory Public/Granted day:2017-11-07
Information query
IPC分类:
