A method for controlling the temperature of a mounting table in a plasma processing apparatus, includes: calculating a first heat input amount according to high frequency power applied in a given process, wherein the first heat input amount is calculated based on a data table, the data table being generated by measuring temperatures so as to find a first relationship between the high frequency power applied in the plasma processing apparatus and the heat input amount to the mounting table; controlling, based on an operation map, the temperature of at least one of the first heating mechanism and the cooling mechanism so that a first temperature difference between the cooling mechanism and the first heating mechanism is within a controllable range corresponding to the first heat input amount, wherein the temperature of the first heating mechanism is controllable upon the first temperature difference falling within the controllable.