公开(公告)号：US20180166257A1

公开(公告)日：2018-06-14

申请号：US15889900

申请日：2018-02-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki MIZUTANI ,  Hiroshi TSUJIMOTO

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/3065

Abstract: In the exemplary embodiment, a method for supplying a gas is provided. This method includes: supplying a processing gas to each of a central gas inlet portion and a peripheral gas inlet portion through a first branch line and a second branch line; closing a valve at a downstream side in a gas line for an additional gas, and filling the additional gas in a tube between the valve and an upstream flow rate controller; opening the valve after filling the additional gas, and supplying a high frequency power to one of an upper electrode and a lower electrode from a high frequency power supply after opening the valve.

公开(公告)号：US20160365229A1

公开(公告)日：2016-12-15

申请号：US15175229

申请日：2016-06-07

Applicant: Tokyo Electron Limited

Inventor： Keigo TOYODA ,  Hiroshi TSUJIMOTO

IPC: H01J37/32

CPC classification number: H01J37/32522 ,  G05B2219/45212 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32935 ,  H01J2237/334

Abstract: A method for controlling the temperature of a mounting table in a plasma processing apparatus, includes: calculating a first heat input amount according to high frequency power applied in a given process, wherein the first heat input amount is calculated based on a data table, the data table being generated by measuring temperatures so as to find a first relationship between the high frequency power applied in the plasma processing apparatus and the heat input amount to the mounting table; controlling, based on an operation map, the temperature of at least one of the first heating mechanism and the cooling mechanism so that a first temperature difference between the cooling mechanism and the first heating mechanism is within a controllable range corresponding to the first heat input amount, wherein the temperature of the first heating mechanism is controllable upon the first temperature difference falling within the controllable.

Abstract translation: 一种用于控制等离子体处理装置中的安装台的温度的方法，包括：根据在给定过程中施加的高频功率来计算第一热输入量，其中基于数据表计算第一热输入量， 数据表是通过测量温度产生的，以便找到在等离子体处理装置中施加的高频功率与安装台的热输入量之间的第一关系; 基于操作图来控制第一加热机构和冷却机构中的至少一个的温度，使得冷却机构和第一加热机构之间的第一温度差在与第一加热输入量对应的可控范围内 ，其中所述第一加热机构的温度在所述可控制的第一温差之后是可控的。

公开(公告)号：US20150144266A1

公开(公告)日：2015-05-28

申请号：US14600288

申请日：2015-01-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32577

Abstract: The substrate processing apparatus includes a lower electrode on which a substrate is capable of being held, a high frequency power source electrically connected to the lower electrode, an upper electrode facing the lower electrode, a plasma processing space being formed between the lower electrode and the upper electrode, wherein the upper electrode includes an inner upper electrode facing a center portion of the lower electrode and an outer upper electrode facing a circumferential portion of the lower electrode, the inner electrode and the outer electrode being electrically insulated from each other, a first direct current power source electrically connected to the inner upper electrode to apply a positive direct current voltage, and a dielectric member covering a bottom surface of the upper electrode, the dielectric member facing the lower electrode with the plasma processing space in-between.

Abstract translation: 基板处理装置包括能够保持基板的下部电极，与下部电极电连接的高频电源，与下部电极相对的上部电极，形成在下部电极和下部电极之间的等离子体处理空间 上电极，其中上电极包括面向下电极的中心部分的内上电极和面向下电极的周向部分的外上电极，内电极和外电极彼此电绝缘，第一 电连接到内部上部电极以施加正的直流电压的直流电源，以及覆盖上部电极的底表面的电介质构件，介电构件面向下部电极，其间具有等离子体处理空间。

公开(公告)号：US20240222090A1

公开(公告)日：2024-07-04

申请号：US18541526

申请日：2023-12-15

Applicant: Tokyo Electron Limited

Inventor： Takashi ARAMAKI ,  Lifu LI ,  Hiroshi TSUJIMOTO

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32568 ,  H01J37/32091 ,  H01J2237/2007

Abstract: The purpose of the present disclosure is to provide a plasma processing apparatus including: a plasma processing chamber; a first bias electrode disposed in an electrostatic chuck to have a first outer diameter; a second bias electrode disposed in the electrostatic chuck to have a second outer diameter; a third bias electrode disposed in the electrostatic chuck to have a third outer diameter; a first DC power supply; a second DC power supply; a third DC power supply; a voltage adder; a first voltage pulse generator electrically connected to the first bias electrode and configured to generate a first voltage pulse signal; a second voltage pulse generator electrically connected to the second bias electrode and configured to generate a second voltage pulse signal; and a third voltage pulse generator electrically connected to the third bias electrode and configured to generate a third voltage pulse signal.

公开(公告)号：US20210335577A1

公开(公告)日：2021-10-28

申请号：US17241442

申请日：2021-04-27

Applicant: Tokyo Electron Limited

Inventor： Ikko TANAKA ,  Lifu LI ,  Hiroshi TSUJIMOTO ,  Atsushi TERASAWA

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a substrate stage on which a substrate is disposed, a first radio-frequency power supply configured to supply first radio-frequency power having a first frequency to the substrate stage, an impedance converter configured to convert an impedance on a load side seen from the first radio-frequency power supply into a set impedance, a second radio-frequency power supply configured to supply second radio-frequency power having a second frequency lower than the first frequency to the substrate stage, and a controller configured to control the set impedance of the impedance converter, and the controller sets the set impedance according to a substrate processing.

公开(公告)号：US20210305030A1

公开(公告)日：2021-09-30

申请号：US17199001

申请日：2021-03-11

Applicant: Tokyo Electron Limited

Inventor： Hiroshi TSUJIMOTO ,  Ikko TANAKA

IPC: H01J37/32

Abstract: Provided is a substrate processing apparatus comprising: a substrate support on which a substrate is mounted; a first radio frequency power supply that outputs first radio frequency power with a first frequency to the substrate support; a second radio frequency power supply that outputs second radio frequency power with a second frequency lower than the first frequency to the substrate support; a sensor that detects reflected waves received from the substrate support and a processor that controls the first radio frequency power supply so that an effective power, which is equal to a difference between the power of the reflected waves detected by the sensor and the output power of the first radio frequency power supply, reaches a set value.

公开(公告)号：US20210043431A1

公开(公告)日：2021-02-11

申请号：US16979799

申请日：2019-06-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mohd Fairuz BIN BUDIMAN ,  Hiroshi TSUJIMOTO

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  H01L21/3065 ,  H01L21/66

Abstract: In a plasma etching method for etching a target object by plasma in a state where a pressure in a processing container having a consumable member is maintained at a constant level, variation of time for temperature decrease of the consumable member from a first temperature to a second temperature lower than the first temperature or variation of speed of the temperature decrease of the consumable member from the first temperature to the second temperature is measured. Further, a degree of consumption of the consumable member is estimated from the variation of time or the variation of speed based on information on correlation between the variation of time or the variation of speed and the degree of consumption of the consumable member.

公开(公告)号：US20160299514A1

公开(公告)日：2016-10-13

申请号：US15080692

申请日：2016-03-25

Applicant: Tokyo Electron Limited

Inventor： Kumiko ONO ,  Hiroshi TSUJIMOTO ,  Atsushi SAWACHI ,  Norihiko AMIKURA ,  Norikazu SASAKI ,  Yoshitaka KAWAGUCHI

IPC: G05D16/20

CPC classification number: G05D7/0647

Abstract: A gas supply control method uses a pressure control flowmeter and first and second valves provided upstream and downstream, respectively, of the pressure control flowmeter in a gas supply line. The pressure control flowmeter includes a control valve and an orifice. The gas supply control method includes maintaining a pressure P1 of a first gas supply pipe between the orifice and the control valve and a pressure P2 of a second gas supply pipe between the orifice and the second valve so as to satisfy P1>2×P2. The supply of gas is controlled by controlling the opening and closing of the second valve with the first valve being open and the control valve being controlled. A volume V1 of the first gas supply pipe and a volume V2 of the second gas supply pipe have a relationship of V1/V2≧9.

Abstract translation: 气体供给控制方法使用压力控制用流量计和分别设置在气体供给管路中的压力控制用流量计的上游和下游的第一阀和第二阀。 压力控制流量计包括控制阀和孔。 气体供给控制方法包括：保持孔和控制阀之间的第一气体供给管的压力P1和孔与第二阀之间的第二气体供给管的压力P2，以满足P1> 2×P2。 通过控制第一阀打开并控制控制阀来控制第二阀的打开和关闭来控制气体供应。 第一气体供给管的体积V1和第二气体供给管的体积V2具有V1 /V2≥9的关系。

公开(公告)号：US20220301830A1

公开(公告)日：2022-09-22

申请号：US17654126

申请日：2022-03-09

Applicant: Tokyo Electron Limited

Inventor： Lifu LI ,  Hironobu KUDO ,  Hiroshi TSUJIMOTO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber, a substrate support including a bottom electrode, and a top electrode assembly disposed above the substrate support. The top electrode assembly includes a top electrode plate and a thermally conductive plate disposed above the top electrode plate. The top electrode assembly includes a coolant flow path disposed within the thermally conductive plate. The top electrode assembly includes at least one heating element thermally connected to the thermally conductive plate, the heating element being disposed at a location that does not overlap the coolant flow path in a height direction of the plasma processing apparatus. The plasma processing apparatus includes a controller that controls at least one among a coolant flowing through the coolant flow path and the heating element, based on a temperature of the top electrode plate detected by a temperature sensor, to adjust the temperature of the top electrode plate.

公开(公告)号：US20190295825A1

公开(公告)日：2019-09-26

申请号：US16358914

申请日：2019-03-20

Applicant: Tokyo Electron Limited

Inventor： Hiroshi TSUJIMOTO ,  Toshikatsu TOBANA

IPC: H01J37/32 ,  H01L21/67

Abstract: A cleaning method for cleaning a processing apparatus including a processing container, a mounting stage configured to mount an object to be processed inside the processing container, an edge ring disposed at a peripheral edge portion of the mounting stage, a gas supply unit configured to supply a gas into an inside of the processing container, and a direct current power source configured to apply a direct voltage to the edge ring, and an exhaust unit configured to exhaust the inside of the processing container includes a first process of exhausting the gas inside the processing container by the exhaust unit while the gas is supplied into the inside of the processing container by the gas supply unit at least predetermined flow rate, and a second process of applying a predetermined direct voltage to the edge ring by the direct current power source.