发明申请
US20160365283A1 ETCH-RESISTANT WATER SOLUBLE MASK FOR HYBRID WAFER DICING USING LASER SCRIBING AND PLASMA ETCH
有权
使用激光切割和等离子体蚀刻的混合波浪蚀刻防蚀水溶性掩模
- 专利标题: ETCH-RESISTANT WATER SOLUBLE MASK FOR HYBRID WAFER DICING USING LASER SCRIBING AND PLASMA ETCH
- 专利标题(中): 使用激光切割和等离子体蚀刻的混合波浪蚀刻防蚀水溶性掩模
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申请号: US14738389申请日: 2015-06-12
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公开(公告)号: US20160365283A1公开(公告)日: 2016-12-15
- 发明人: Wei-Sheng Lei , Mohammad Kamruzzaman Chowdhury , Brad Eaton , Ajay Kumar
- 申请人: Wei-Sheng Lei , Mohammad Kamruzzaman Chowdhury , Brad Eaton , Ajay Kumar
- 主分类号: H01L21/82
- IPC分类号: H01L21/82 ; H01L21/308 ; H01J37/32 ; H01L21/02 ; H01L21/67 ; H01L21/3065 ; H01L21/268
摘要:
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits includes forming a water soluble mask above the semiconductor wafer, the water soluble mask covering and protecting the integrated circuits. The method also includes baking the water soluble mask to increase the etch resistance of the water soluble mask. The method also includes, subsequent to baking the water soluble mask, patterning the water soluble mask with a laser scribing process to provide a water soluble patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also includes plasma etching the semiconductor wafer through the gaps in the water soluble patterned mask to singulate the integrated circuits.
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