Invention Application
- Patent Title: SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES
- Patent Title (中): 选择性外形III-V材料的设备
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Application No.: US15120803Application Date: 2014-03-28
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Publication No.: US20160365416A1Publication Date: 2016-12-15
- Inventor: MATTHEW V. METZ , JACK T. KAVALIEROS , GILBERT DEWEY , WILLY RACHMADY , BENJAMIN CHU-KUNG , MARKO RADOSAVLJEVIC , HAN WUI THEN , RAVI PILLARISETTY , ROBERT S. CHAU
- Applicant: INTEL CORPORATION
- International Application: PCT/US2014/032149 WO 20140328
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L29/66 ; H01L29/78 ; H01L21/02
Abstract:
An embodiment includes a III-V material based device, comprising: a first III-V material based buffer layer on a silicon substrate; a second III-V material based buffer layer on the first III-V material based buffer layer, the second III-V material including aluminum; and a III-V material based device channel layer on the second III-V material based buffer layer. Another embodiment includes the above subject matter and the first and second III-V material based buffer layers each have a lattice parameter equal to the III-V material based device channel layer. Other embodiments are included herein.
Public/Granted literature
- US09853107B2 Selective epitaxially grown III-V materials based devices Public/Granted day:2017-12-26
Information query
IPC分类:
