Invention Application
- Patent Title: FORMATION OF COPPER LAYER STRUCTURE WITH SELF ANNEAL STRAIN IMPROVEMENT
- Patent Title (中): 形成具有自我神经变性改良的铜层结构
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Application No.: US14743926Application Date: 2015-06-18
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Publication No.: US20160372421A1Publication Date: 2016-12-22
- Inventor: Jun-Nan NIAN , Shiu-Ko JANGJIAN , Chi-Cheng HUNG , Yu-Sheng WANG , Hung-Hsu CHEN
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/288 ; H01L21/768 ; B32B15/01
Abstract:
A copper layer structure includes a first copper layer, a second copper layer and a carbon-rich copper layer. The second copper layer is disposed over the first copper layer. The carbon-rich copper layer is sandwiched between the first copper layer and the second copper layer. A carbon concentration of the carbon-rich copper layer is greater than a carbon concentration of the first copper layer and a carbon concentration of the second copper layer.
Public/Granted literature
- US09870995B2 Formation of copper layer structure with self anneal strain improvement Public/Granted day:2018-01-16
Information query
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