Invention Application
US20160379872A1 METHOD TO PROTECT MOL METALLIZATION FROM HARDMASK STRIP PROCESS 有权
从HARDMASK条纹过程中保护金属化的方法

METHOD TO PROTECT MOL METALLIZATION FROM HARDMASK STRIP PROCESS
Abstract:
A method can include forming a contact trench in a semiconductor structure so that the contact trench extends to a contact formation, the forming including using a hardmask layer, and filling the contact trench with a sacrificial material layer, the sacrificial material layer formed over the contact formation. A semiconductor structure can include a sacrificial material layer over a contact formation.
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