Invention Application
US20160379973A1 ULTRASONIC TRANSDUCERS IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) WAFERS AND RELATED APPARATUS AND METHODS
有权
补充金属氧化物半导体（CMOS）波导中的超声波传感器及相关装置及方法
- Patent Title: ULTRASONIC TRANSDUCERS IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) WAFERS AND RELATED APPARATUS AND METHODS
- Patent Title (中): 补充金属氧化物半导体（CMOS）波导中的超声波传感器及相关装置及方法
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Application No.: US15259243Application Date: 2016-09-08
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Publication No.: US20160379973A1Publication Date: 2016-12-29
- Inventor: Jonathan M. Rothberg , Keith G. Fife , Nevada J. Sanchez , Susan A. Alie
- Applicant: Butterfly Network, Inc.
- Applicant Address: US CT Guilford
- Assignee: Butterfly Network, Inc.
- Current Assignee: Butterfly Network, Inc.
- Current Assignee Address: US CT Guilford
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/56 ; H01L21/768 ; H01L21/8238 ; H01L23/522 ; A61B8/00 ; H01L27/092 ; B06B1/02 ; B81B3/00 ; B81B7/00 ; B81C1/00 ; H01L21/3213 ; H01L23/528
Abstract:
Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
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