Invention Application
US20160380063A1 Method for Producing a Semiconductor Component with Insulated Semiconductor Mesas in a Semiconductor Body
审中-公开
用于在半导体本体中制造具有绝缘半导体板的半导体部件的方法
- Patent Title: Method for Producing a Semiconductor Component with Insulated Semiconductor Mesas in a Semiconductor Body
- Patent Title (中): 用于在半导体本体中制造具有绝缘半导体板的半导体部件的方法
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Application No.: US15189147Application Date: 2016-06-22
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Publication No.: US20160380063A1Publication Date: 2016-12-29
- Inventor: Franz Hirler , Anton Mauder , Hermann Gruber , Hubert Rothleitner , Andreas Peter Meiser
- Applicant: Infineon Technologies AG
- Main IPC: H01L29/40
- IPC: H01L29/40

Abstract:
A method for producing a semiconductor component is provided. The method includes providing a semiconductor body with a first surface and a second surface opposite to the first surface, etching an insulation trench from the first surface partially into the semiconductor body, forming a first insulation layer on one or more sidewalls of the insulation trench, processing the second surface by at least one of grinding, polishing and a CMP-process to expose the first insulation layer, and depositing on the processed second surface a second insulation layer which extends to the first insulation layer.
Information query
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