Invention Application
- Patent Title: METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US15112429Application Date: 2014-03-19
-
Publication No.: US20170004990A1Publication Date: 2017-01-05
- Inventor: Un-Byoung Kang , Joonsik Sohn , Jung-Seok Ahn , Chungsun Lee , Taeje Cho
- Applicant: Un-Byoung Kang , Joonsik Sohn , Jung-Seok Ahn , Chungsun Lee , Taeje Cho
- International Application: PCT/IB2014/059958 WO 20140319
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L23/00 ; H01L25/00 ; H01L21/78 ; H01L23/544 ; H01L25/065 ; H01L21/48 ; H01L21/56
Abstract:
Provided are methods of fabricating a semiconductor device. According to the method, a first glue layer, a first release layer, a second glue layer, and a second release layer may be sequentially interposed between a carrier and a device wafer. All of the first glue layer, the first release layer, the second glue layer, and the second release layer may be formed of thermosetting resin.
Public/Granted literature
- US10157766B2 Method of fabricating a semiconductor device Public/Granted day:2018-12-18
Information query
IPC分类:
