发明申请
- 专利标题： MONITOR PROCESS FOR LITHOGRAPHY AND ETCHING PROCESSES
- 专利标题（中）： 监测和蚀刻过程的监测过程
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申请号： US14791241申请日： 2015-07-02
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公开(公告)号： US20170005015A1公开(公告)日： 2017-01-05
- 发明人: Jhen-Cyuan Li , Yi-Lin Chen , Shui-Yen Lu
- 申请人： United Microelectronics Corp.
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L21/027 ; H01L21/306 ; H01L23/544 ; H01L21/8238
摘要：
A monitor process for lithography and etching processes includes the following steps. A first lithography process and a first etching process are performed to define a first alignment mark having a first direction portion orthogonal to a second direction portion. A second lithography process is performed to overlap a part of the first direction portion as well as a part of the second direction portion, thereby maintaining an exposed area of the first alignment mark having a first corresponding direction portion and a second corresponding direction portion. A first critical dimension of the first corresponding direction portion and a second critical dimension of the second corresponding direction portion are measured.
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