公开(公告)号：US20170005015A1

公开(公告)日：2017-01-05

申请号：US14791241

申请日：2015-07-02

申请人： United Microelectronics Corp.

发明人： Jhen-Cyuan Li ,  Yi-Lin Chen ,  Shui-Yen Lu

IPC分类号： H01L21/66 ,  H01L21/027 ,  H01L21/306 ,  H01L23/544 ,  H01L21/8238

CPC分类号： H01L22/12 ,  G03F7/70633 ,  H01L21/0274 ,  H01L21/8238 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/5446

摘要： A monitor process for lithography and etching processes includes the following steps. A first lithography process and a first etching process are performed to define a first alignment mark having a first direction portion orthogonal to a second direction portion. A second lithography process is performed to overlap a part of the first direction portion as well as a part of the second direction portion, thereby maintaining an exposed area of the first alignment mark having a first corresponding direction portion and a second corresponding direction portion. A first critical dimension of the first corresponding direction portion and a second critical dimension of the second corresponding direction portion are measured.

摘要翻译： 用于光刻和蚀刻工艺的监测方法包括以下步骤。 执行第一光刻处理和第一蚀刻处理以限定具有与第二方向部分正交的第一方向部分的第一对准标记。 执行第二光刻处理以与第一方向部分的一部分以及第二方向部分的一部分重叠，从而保持第一对准标记的暴露区域具有第一对应方向部分和第二对应方向部分。 测量第一对应方向部分的第一临界尺寸和第二对应方向部分的第二临界尺寸。