Invention Application
US20170011930A1 METHOD OF FORMING GRAPHENE NANOPATTERN, GRAPHENE-CONTAINING DEVICE, AND METHOD OF MANUFACTURING THE GRAPHENE-CONTAINING DEVICE
有权
形成石墨纳米微粒的方法，含有石墨的装置以及制造含有石墨的装置的方法
- Patent Title: METHOD OF FORMING GRAPHENE NANOPATTERN, GRAPHENE-CONTAINING DEVICE, AND METHOD OF MANUFACTURING THE GRAPHENE-CONTAINING DEVICE
- Patent Title (中): 形成石墨纳米微粒的方法，含有石墨的装置以及制造含有石墨的装置的方法
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Application No.: US15068110Application Date: 2016-03-11
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Publication No.: US20170011930A1Publication Date: 2017-01-12
- Inventor: Seongjun JEONG , Seongjun PARK , Yunseong LEE
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2015-0096788 20150707
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L29/06 ; H01L21/3065 ; H01L29/16
Abstract:
Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer.
Public/Granted literature
- US09748108B2 Method of forming graphene nanopattern by using mask formed from block copolymer Public/Granted day:2017-08-29
Information query
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