公开(公告)号：US20200266153A1

公开(公告)日：2020-08-20

申请号：US16866033

申请日：2020-05-04

申请人： Samsung Electronics Co., Ltd.

发明人： Hyunjae SONG ,  Seunggeol NAM ,  Yeonchoo CHO ,  Seongjun PARK ,  Hyeonjin SHIN ,  Jaeho LEE

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L23/522

摘要： Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US20190294047A1

公开(公告)日：2019-09-26

申请号：US16426046

申请日：2019-05-30

申请人： Samsung Electronics Co., Ltd.

发明人： Hyeonjin SHIN ,  Sangwon KIM ,  Minsu SEOL ,  Seongjun PARK ,  Yeonchoo CHO

IPC分类号： G03F7/11 ,  G03F7/36 ,  G03F7/09 ,  G03F7/16

摘要： A hardmask composition may include graphene nanoparticles having a size in a range of about 5 nm to about 100 nm and a solvent.

公开(公告)号：US20190157212A1

公开(公告)日：2019-05-23

申请号：US16257189

申请日：2019-01-25

申请人： Samsung Electronics Co., Ltd.

发明人： Hyunjae SONG ,  Seunggeol NAM ,  Yeonchoo CHO ,  Seongjun PARK ,  Hyeonjin SHIN ,  Jaeho LEE

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/53209 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5226

摘要： Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US20180190800A1

公开(公告)日：2018-07-05

申请号：US15904967

申请日：2018-02-26

申请人： Samsung Electronics Co., Ltd.

发明人： Kyungeun BYUN ,  Jisoo KYOUNG ,  Seongjun PARK ,  Hyeonjin SHIN ,  Hyunjae SONG ,  Jaeho LEE

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/45

CPC分类号： H01L29/66977 ,  H01L29/456 ,  H01L29/78

摘要： An electronic device includes a semiconductor layer, a tunneling layer formed of a material including a two-dimensional (2D) material so as to directly contact a certain region of the semiconductor layer, and a metal layer formed on the tunneling layer.

公开(公告)号：US20170011930A1

公开(公告)日：2017-01-12

申请号：US15068110

申请日：2016-03-11

申请人： Samsung Electronics Co., Ltd.

发明人： Seongjun JEONG ,  Seongjun PARK ,  Yunseong LEE

IPC分类号： H01L21/308 ,  H01L29/06 ,  H01L21/3065 ,  H01L29/16

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02527 ,  H01L21/02603 ,  H01L21/042 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/467 ,  H01L21/823412 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66037 ,  H01L29/66045 ,  H01L29/775 ,  H01L29/778 ,  H01L29/78696 ,  H01L51/0045 ,  Y10S977/755 ,  Y10S977/888

摘要： Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer.

摘要翻译： 提供形成石墨烯纳米图案的方法，含有石墨烯的装置以及制造含石墨烯的装置的方法。 形成石墨烯纳米图案的方法可以包括在基底上形成石墨烯层，在石墨烯层上形成嵌段共聚物层，在石墨烯层的至少一侧露出衬底的区域，从块形成掩模图案 通过除去嵌段共聚物的多个第一区域和多个第二区域中的一个，并且通过使用掩模图案作为蚀刻掩模，将纳米级的石墨烯层图案化。 嵌段共聚物层可以形成为直接接触石墨烯层。 嵌段共聚物层可以形成为直接接触在石墨烯层的至少一侧上暴露的衬底结构的区域。

公开(公告)号：US20160315561A1

公开(公告)日：2016-10-27

申请号：US15049726

申请日：2016-02-22

申请人： Samsung Electronics Co., Ltd.

发明人： Hyeonjin SHIN ,  Kyungeun BYUN ,  Minsu SEOL ,  Seongjun PARK

IPC分类号： H02N1/04

CPC分类号： H02N1/04

摘要： A triboelectric generator includes first and second electrodes facing each other, and a first energy generation layer provided on the first electrode and generating electric energy through contact with other material, the first energy generation layer comprising a two-dimensional (2D) material having a crystal structure of a 2D shape.

摘要翻译： 摩擦电发生器包括彼此面对的第一和第二电极，以及设置在第一电极上并通过与其它材料接触而产生电能的第一能量产生层，第一能量产生层包括具有晶体的二维（2D）材料 2D形状的结构。

公开(公告)号：US20160020280A1

公开(公告)日：2016-01-21

申请号：US14635576

申请日：2015-03-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jinseong HEO ,  Kiyoung LEE ,  Seongjun PARK

IPC分类号： H01L29/16 ,  H01L29/786

摘要： Example embodiments relate to a graphene device, methods of manufacturing and operating the same, and an electronic apparatus including the graphene device. The graphene device is a multifunctional device. The graphene device may include a graphene layer and a functional material layer. The graphene device may have a function of at least one of a memory device, a piezoelectric device, and an optoelectronic device within the structure of a switching device/electronic device. The functional material layer may include at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, a piezoelectric material, a light emission material, and a photoactive material.

摘要翻译： 示例性实施例涉及石墨烯器件，其制造和操作方法，以及包括石墨烯器件的电子设备。 石墨烯装置是多功能装置。 石墨烯装置可以包括石墨烯层和功能材料层。 石墨烯器件可以具有在开关器件/电子器件的结构内的存储器件，压电器件和光电子器件中的至少一个的功能。 功能材料层可以包括电阻变化材料，相变材料，铁电体材料，多铁性材料，多分子，压电材料，发光材料和光活性材料中的至少一种。

公开(公告)号：US20220262903A1

公开(公告)日：2022-08-18

申请号：US17735475

申请日：2022-05-03

申请人： Samsung Electronics Co., Ltd.

发明人： Minhyun LEE ,  Haeryong KIM ,  Hyeonjin SHIN ,  Seunggeol NAM ,  Seongjun PARK

IPC分类号： H01L29/08 ,  H01L21/285 ,  H01L29/45 ,  H01L29/417 ,  H01L29/04 ,  H01L29/06 ,  H01L29/267 ,  H01L29/78

摘要： A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US20200152808A1

公开(公告)日：2020-05-14

申请号：US16740900

申请日：2020-01-13

申请人： Samsung Electronics Co., Ltd.

发明人： Kiyoung LEE ,  Jinseong HEO ,  Jaeho LEE ,  Haeryong KIM ,  Seongjun PARK ,  Hyeonjin SHIN ,  Eunkyu LEE ,  Sanghyun JO

IPC分类号： H01L31/0216 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/18 ,  G01N21/59

摘要： A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US20190148493A1

公开(公告)日：2019-05-16

申请号：US16248945

申请日：2019-01-16

申请人： Samsung Electronics Co., Ltd.

发明人： Minhyun LEE ,  Haeryong KIM ,  Hyeonjin SHIN ,  Seunggeol NAM ,  Seongjun PARK

IPC分类号： H01L29/08 ,  H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/45 ,  H01L21/285 ,  H01L29/04 ,  H01L29/267

CPC分类号： H01L29/0847 ,  H01L21/28512 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/267 ,  H01L29/41725 ,  H01L29/45 ,  H01L29/78

摘要： A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.