Invention Application
- Patent Title: Method and Structure for Mandrel and Spacer Patterning
- Patent Title (中): 心轴和间隔图案的方法和结构
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Application No.: US14801383Application Date: 2015-07-16
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Publication No.: US20170017745A1Publication Date: 2017-01-19
- Inventor: Chung-Ming Wang , Chih-Hsiung Peng , Chi-Kang Chang , Kuei-Shun Chen , Shih-Chi Fu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L29/06 ; H01L27/088

Abstract:
A method includes receiving an integrated circuit design layout that includes first and second layout blocks separated by a first space. The first and second layout blocks include, respectively, first and second line patterns oriented lengthwise in a first direction. The method further includes adding a dummy pattern to the first space, which connects the first and second line patterns. The method further includes outputting a mandrel pattern layout and a cut pattern layout in a computer-readable format. The mandrel pattern layout includes the first and second line patterns and the dummy pattern. The cut pattern layout includes a pattern corresponding to the first space. In embodiments, the method further includes manufacturing a first mask with the mandrel pattern layout and manufacturing a second mask with the cut pattern layout. In embodiments, the method further includes patterning a substrate with the first mask and the second mask.
Public/Granted literature
- US09946827B2 Method and structure for mandrel and spacer patterning Public/Granted day:2018-04-17
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