发明申请
- 专利标题： SILICON GERMANIUM AND SILICON FINS ON OXIDE FROM BULK WAFER
- 专利标题（中）： 氧化硅上的硅锗和硅氧烷
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申请号： US15220150申请日： 2016-07-26
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公开(公告)号： US20170018465A1公开(公告)日： 2017-01-19
- 发明人: Hong He , James Kuss , Nicolas Loubet , Junli Wang
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , STMicroelectronics, Inc.
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L27/092 ; H01L21/02 ; H01L29/161 ; H01L21/306 ; H01L21/324 ; H01L27/12 ; H01L21/8238
摘要：
A method for forming fins includes growing a SiGe layer and a silicon layer over a surface of a bulk Si substrate, patterning fin structures from the silicon layer and the SiGe layer and filling between the fin structures with a dielectric fill. Trenches are formed to expose end portions of the fin structures. A first region of the fin structures is blocked off. The SiGe layer of the fin structures of a second region is removed by selectively etching the fin structures from the end portions to form voids, which are filled with dielectric material. The silicon layer of the fin structures is exposed. The SiGe layer in the first region is thermally oxidized to drive Ge into the silicon layer to form SiGe fins on an oxide layer in the first region and silicon fins on the dielectric material in the second region.
公开/授权文献
- US10074577B2 Silicon germanium and silicon fins on oxide from bulk wafer 公开/授权日：2018-09-11
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