Invention Application
- Patent Title: Semiconductor Constructions and Memory Arrays
- Patent Title (中): 半导体构造和存储器阵列
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Application No.: US15287609Application Date: 2016-10-06
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Publication No.: US20170025606A1Publication Date: 2017-01-26
- Inventor: Andrea Redaelli , Cinzia Perrone
- Applicant: Micron Technology, Inc.
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.
Public/Granted literature
- US09748480B2 Semiconductor constructions and memory arrays Public/Granted day:2017-08-29
Information query
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