公开(公告)号：US20170025606A1

公开(公告)日：2017-01-26

申请号：US15287609

申请日：2016-10-06

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Cinzia Perrone

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/141 ,  H01L23/481 ,  H01L23/5256 ,  H01L27/2463 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.

Abstract translation: 一些实施例包括具有与上表面的导电互连并且在互连上具有导电结构的半导体结构。 该结构包括沿着上表面的水平的第一部分和在拐角处连接到第一部分的非水平的第二部分。 第二部分具有上边缘。 上边缘相对于互连的上表面偏移，使得上边缘不直接在所述上表面上方。 一些实施例包括存储器阵列。

公开(公告)号：US09245927B2

公开(公告)日：2016-01-26

申请号：US14490395

申请日：2014-09-18

Applicant: Micron Technology, Inc.

Inventor： Fabio Pellizzer ,  Cinzia Perrone

IPC: H01L29/02 ,  H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L27/2409 ,  H01L27/2445 ,  H01L29/02 ,  H01L45/06 ,  H01L45/12 ,  H01L45/124 ,  H01L45/141 ,  H01L45/144 ,  H01L45/145 ,  H01L45/1666 ,  H01L45/1691

Abstract: Some embodiments include a construction having oxygen-sensitive structures directly over spaced-apart nodes. Each oxygen-sensitive structure includes an angled plate having a horizontal portion along a top surface of a node and a non-horizontal portion extending upwardly from the horizontal portion. Each angled plate has an interior sidewall where an inside corner is formed between the non-horizontal portion and the horizontal portion, an exterior sidewall in opposing relation to the interior sidewall, and lateral edges. Bitlines are over the oxygen-sensitive structures, and have sidewalls extending upwardly from the lateral edges of the oxygen-sensitive structures. A non-oxygen-containing structure is along the interior sidewalls, along the exterior sidewalls, along the lateral edges, over the bitlines, and along the sidewalls of the bitlines. Some embodiments include memory arrays, and methods of forming memory cells.

Abstract translation: 一些实施例包括直接在间隔开的节点上的具有氧敏感结构的结构。 每个氧敏感结构包括具有沿节点顶表面的水平部分和从水平部分向上延伸的非水平部分的倾斜板。 每个倾斜板具有内侧壁，其中在非水平部分和水平部分之间形成内角，与侧壁相对的外侧壁和侧边缘。 位线在氧敏感结构之上，并且具有从氧敏感结构的侧边缘向上延伸的侧壁。 非含氧结构沿着内侧壁，沿着外侧壁沿着横向边缘，位线以及沿着位线的侧壁沿着内侧。 一些实施例包括存储器阵列和形成存储器单元的方法。

公开(公告)号：US20140319447A1

公开(公告)日：2014-10-30

申请号：US14323922

申请日：2014-07-03

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Cinzia Perrone

IPC: H01L45/00 ,  H01L27/24 ,  H01L23/48

CPC classification number: H01L45/141 ,  H01L23/481 ,  H01L23/5256 ,  H01L27/2463 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.

Abstract translation: 一些实施例包括具有与上表面的导电互连并且在互连上具有导电结构的半导体结构。 该结构包括沿着上表面的水平的第一部分和在拐角处连接到第一部分的非水平的第二部分。 第二部分具有上边缘。 上边缘相对于互连的上表面偏移，使得上边缘不直接在所述上表面上方。 一些实施例包括存储器阵列。

公开(公告)号：US08759143B1

公开(公告)日：2014-06-24

申请号：US14173454

申请日：2014-02-05

Applicant: Micron Technology, Inc.

Inventor： Fabio Pelizzer ,  Cinzia Perrone

IPC: H01L21/00 ,  H01L45/00 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31111 ,  H01L21/02115 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

Abstract: Some embodiments include methods of forming semiconductor constructions. Carbon-containing material is formed over oxygen-sensitive material. The carbon-containing material and oxygen-sensitive material together form a structure having a sidewall that extends along both the carbon-containing material and the oxygen-sensitive material. First protective material is formed along the sidewall. The first protective material extends across an interface of the carbon-containing material and the oxygen-sensitive material, and does not extend to a top region of the carbon-containing material. Second protective material is formed across the top of the carbon-containing material, with the second protective material having a common composition to the first protective material. The second protective material is etched to expose an upper surface of the carbon-containing material. Some embodiments include semiconductor constructions, memory arrays and methods of forming memory arrays.

Abstract translation: 一些实施例包括形成半导体结构的方法。 含氧材料在氧敏感材料上形成。 含碳材料和氧敏感材料一起形成具有沿着含碳材料和氧敏感材料两者延伸的侧壁的结构。 第一保护材料沿侧壁形成。 第一保护材料延伸穿过含碳材料和氧敏感材料的界面，并且不延伸到含碳材料的顶部区域。 第二保护材料横跨含碳材料的顶部形成，第二保护材料与第一保护材料具有共同的组成。 蚀刻第二保护材料以暴露含碳材料的上表面。 一些实施例包括半导体构造，存储器阵列和形成存储器阵列的方法。

公开(公告)号：US09748480B2

公开(公告)日：2017-08-29

申请号：US15287609

申请日：2016-10-06

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Cinzia Perrone

IPC: H01L29/792 ,  H01L45/00 ,  H01L23/525 ,  H01L27/24 ,  H01L23/48

CPC classification number: H01L45/141 ,  H01L23/481 ,  H01L23/5256 ,  H01L27/2463 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.

公开(公告)号：US20150200366A1

公开(公告)日：2015-07-16

申请号：US14599636

申请日：2015-01-19

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Giorgio Servalli ,  Pietro Petruzza ,  Cinzia Perrone

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/124 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1286 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/16

Abstract: Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element.

Abstract translation: 具有带有倾斜侧壁的加热器的记忆单元及其形成方法在此描述。 作为示例，形成电阻存储器单元阵列的方法可以包括形成具有相对于垂直平面成角度的第一加热元件的第一电阻式存储单元，形成与第一电阻式存储单元相邻的第二电阻式存储单元，并具有 相对于垂直平面并朝向第一加热器成角度的第二加热器元件，以及形成与第一电阻式存储单元相邻的第三电阻式存储单元，并具有相对于垂直平面成角度且远离第一加热器的第三加热元件 元件。

公开(公告)号：US20150001461A1

公开(公告)日：2015-01-01

申请号：US14490395

申请日：2014-09-18

Applicant: Micron Technology, Inc.

Inventor： Fabio Pellizzer ,  Cinzia Perrone

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L27/2409 ,  H01L27/2445 ,  H01L29/02 ,  H01L45/06 ,  H01L45/12 ,  H01L45/124 ,  H01L45/141 ,  H01L45/144 ,  H01L45/145 ,  H01L45/1666 ,  H01L45/1691

Abstract: Some embodiments include a construction having oxygen-sensitive structures directly over spaced-apart nodes. Each oxygen-sensitive structure includes an angled plate having a horizontal portion along a top surface of a node and a non-horizontal portion extending upwardly from the horizontal portion. Each angled plate has an interior sidewall where an inside corner is formed between the non-horizontal portion and the horizontal portion, an exterior sidewall in opposing relation to the interior sidewall, and lateral edges. Bitlines are over the oxygen-sensitive structures, and have sidewalls extending upwardly from the lateral edges of the oxygen-sensitive structures. A non-oxygen-containing structure is along the interior sidewalls, along the exterior sidewalls, along the lateral edges, over the bitlines, and along the sidewalls of the bitlines. Some embodiments include memory arrays, and methods of forming memory cells.

Abstract translation: 一些实施例包括直接在间隔开的节点上的具有氧敏感结构的结构。 每个氧敏感结构包括具有沿节点顶表面的水平部分和从水平部分向上延伸的非水平部分的倾斜板。 每个倾斜板具有内侧壁，其中在非水平部分和水平部分之间形成内角，与侧壁相对的外侧壁和侧边缘。 位线在氧敏感结构之上，并且具有从氧敏感结构的侧边缘向上延伸的侧壁。 非含氧结构沿着内侧壁，沿着外侧壁沿着横向边缘，位线以及沿着位线的侧壁沿着内侧。 一些实施例包括存储器阵列和形成存储器单元的方法。

公开(公告)号：US20140154861A1

公开(公告)日：2014-06-05

申请号：US14173454

申请日：2014-02-05

Applicant: Micron Technology, Inc.

Inventor： Fabio Pellizzer ,  Cinzia Perrone

IPC: H01L21/311 ,  H01L45/00 ,  H01L21/02

CPC classification number: H01L21/31111 ,  H01L21/02115 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

Abstract: Some embodiments include methods of forming semiconductor constructions. Carbon-containing material is formed over oxygen-sensitive material. The carbon-containing material and oxygen-sensitive material together form a structure having a sidewall that extends along both the carbon-containing material and the oxygen-sensitive material. First protective material is formed along the sidewall. The first protective material extends across an interface of the carbon-containing material and the oxygen-sensitive material, and does not extend to a top region of the carbon-containing material. Second protective material is formed across the top of the carbon-containing material, with the second protective material having a common composition to the first protective material. The second protective material is etched to expose an upper surface of the carbon-containing material. Some embodiments include semiconductor constructions, memory arrays and methods of forming memory arrays.

Abstract translation: 一些实施例包括形成半导体结构的方法。 含氧材料在氧敏感材料上形成。 含碳材料和氧敏感材料一起形成具有沿着含碳材料和氧敏感材料两者延伸的侧壁的结构。 第一保护材料沿侧壁形成。 第一保护材料延伸穿过含碳材料和氧敏感材料的界面，并且不延伸到含碳材料的顶部区域。 第二保护材料横跨含碳材料的顶部形成，第二保护材料与第一保护材料具有共同的组成。 蚀刻第二保护材料以暴露含碳材料的上表面。 一些实施例包括半导体构造，存储器阵列和形成存储器阵列的方法。

公开(公告)号：US09490425B2

公开(公告)日：2016-11-08

申请号：US14323922

申请日：2014-07-03

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Cinzia Perrone

IPC: H01L29/792 ,  H01L45/00 ,  H01L23/525 ,  H01L27/24 ,  H01L23/48

CPC classification number: H01L45/141 ,  H01L23/481 ,  H01L23/5256 ,  H01L27/2463 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.

Abstract translation: 一些实施例包括具有与上表面的导电互连并且在互连上具有导电结构的半导体构造。 该结构包括沿着上表面的水平的第一部分和在拐角处连接到第一部分的非水平的第二部分。 第二部分具有上边缘。 上边缘相对于互连的上表面偏移，使得上边缘不直接在所述上表面上方。 一些实施例包括存储器阵列。

公开(公告)号：US09343671B2

公开(公告)日：2016-05-17

申请号：US14599636

申请日：2015-01-19

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Giorgio Servalli ,  Pietro Petruzza ,  Cinzia Perrone

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/124 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1286 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/16

Abstract: Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element.