A surface emitting laser for emitting light with a wavelength λ includes a first reflection mirror provided on a semiconductor substrate; a resonator region including an active layer provided on the first reflection mirror; a second reflection mirror, including plural low refraction index layers and plural high refraction index layers, provided on the resonator region; a contact layer provided on the second reflection mirror; a third reflection mirror provided on the contact layer; and an electric current narrowing layer provided between the active layer and the second reflection mirror or in the second reflection mirror. Optical lengths of at least one of thicknesses of the low refraction index layers and the high refraction index layers formed between the electric current narrowing layer and the contact layer are (2N+1)×λ/4 (N=1, 2, . . . ).