Invention Application
US20170029271A1 COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME
有权
补充金属氧化物半导体（CMOS）超声波传感器及其形成方法
- Patent Title: COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME
- Patent Title (中): 补充金属氧化物半导体（CMOS）超声波传感器及其形成方法
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Application No.: US15291697Application Date: 2016-10-12
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Publication No.: US20170029271A1Publication Date: 2017-02-02
- Inventor: Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
- Applicant: Butterfly Network, Inc.
- Applicant Address: US CT Guilford
- Assignee: Butterfly Network, Inc.
- Current Assignee: Butterfly Network, Inc.
- Current Assignee Address: US CT Guilford
- Main IPC: B81C1/00
- IPC: B81C1/00 ; G01N29/24 ; B06B1/02 ; B81B7/00
Abstract:
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
Public/Granted literature
- US09738514B2 Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same Public/Granted day:2017-08-22
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