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US20170029958A1 ETCHANT COMPOSITION AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE BY USING THE SAME 审中-公开
蚀刻组合物及其制造薄膜晶体管基板的方法

ETCHANT COMPOSITION AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE BY USING THE SAME
Abstract:
An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.
Abstract(Chinese):

蚀刻剂组合物包括蚀刻剂组合物，其包含约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化合物，约1重量％至约10重量％的无机酸，约 约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约5重量％的氯化合物，约0.1重量％至约10重量％的脂族磺酸，约1重量％至约20重量％ 重量％的有机酸或有机酸盐，以及基于蚀刻剂组合物的总重量的水。

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