A control circuit of a thin film transistor, comprising: a substrate; a silicon nitride layer disposed on the substrate; a silicon dioxide layer disposed on the silicon nitride layer; a light shielding layer disposed inside the silicon nitride layer, which comprising a first light shielding region and a second light shielding region; at least one N type metal oxide semiconductor disposed on the silicon dioxide layer at a position corresponding to the first light shielding region; at least one P type metal oxide semiconductor disposed on the silicon dioxide layer at a position corresponding to the second light shielding region; each of the N type metal oxide semiconductor and the P type metal oxide semiconductor has a gate electrode layer, a first control signal received by voltage pulses of the gate electrode layer synchronized with a second control signal received by the light shielding layer in voltage variation.