Invention Application
US20170033181A1 METHODS OF FORMING REPLACEMENT FINS COMPRISED OF MULTIPLE LAYERS OF DIFFERENT SEMICONDUCTOR MATERIALS
审中-公开
形成由不同半导体材料的多层组成的替代FINS的方法
- Patent Title: METHODS OF FORMING REPLACEMENT FINS COMPRISED OF MULTIPLE LAYERS OF DIFFERENT SEMICONDUCTOR MATERIALS
- Patent Title (中): 形成由不同半导体材料的多层组成的替代FINS的方法
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Application No.: US14810574Application Date: 2015-07-28
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Publication No.: US20170033181A1Publication Date: 2017-02-02
- Inventor: Timothy J. McArdle , Judson R. Holt , Bharat V. Krishnan , Jody A. Fronheiser
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/306 ; H01L29/66 ; H01L29/423 ; H01L29/165 ; H01L21/02 ; H01L21/311
Abstract:
One illustrative method disclosed herein includes, among other things, individually forming alternating layers of different semiconductor materials in a substrate fin cavity so as to form a multi-layer fin above a recessed substrate fin, wherein each of the layers of different semiconductor materials is formed to a final thickness that is less than a critical thickness of the layer of different semiconductor material being formed, recessing the layer of insulating material so as to expose at least a portion of the multi-layer fin above a recessed upper surface of the layer of insulating material and forming a gate structure around at least a portion of the of exposed the multi-layer fin.
Information query
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