发明申请
- 专利标题： SPUTTERING TARGET, OXIDE SEMICONDUCTING FILM, AND METHOD FOR MAKING THE SAME
- 专利标题（中）： 溅射靶，氧化物半导体膜及其制造方法
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申请号： US14922740申请日： 2015-10-26
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公开(公告)号： US20170037505A1公开(公告)日： 2017-02-09
- 发明人: DA-MING ZHUANG , MING ZHAO , MING-JIE CAO , LI GUO , LENG ZHANG , YAO-WEI WEI
- 申请人： TSINGHUA UNIVERSITY , HON HAI PRECISION INDUSTRY CO., LTD.
- 优先权： CN201510477921.1 20150806
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; H01J37/34 ; C23C14/08 ; B28B3/00 ; H01L29/24 ; H01L29/786
摘要：
An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn), doping metal element (M) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
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