Invention Application
- Patent Title: COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSORS
- Patent Title (中): 补充金属氧化物半导体图像传感器
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Application No.: US15298204Application Date: 2016-10-19
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Publication No.: US20170040365A1Publication Date: 2017-02-09
- Inventor: Seungwook LEE , Jungchak AHN , Youngwoo JUNG
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2014-0107842 20140819
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L29/423

Abstract:
A complementary metal-oxide-semiconductor (CMOS) image sensor is provided. The CMOS image sensor may include an epitaxial layer having a first conductivity type and having first and second surfaces, a first device isolation layer extending from the first surface to the second surface to define first and second pixel regions, a well impurity layer of a second conductivity type formed adjacent to the first surface and formed in the epitaxial layer of each of the first and second pixel regions, and a second device isolation layer formed in the well impurity layer in each of the first and second pixel regions to define first and second active portions spaced apart from each other in each of the first and second pixel regions.
Public/Granted literature
- US09954019B2 Complementary metal-oxide-semiconductor image sensors Public/Granted day:2018-04-24
Information query
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