Invention Application
- Patent Title: CONVERSION OF STRAIN-INDUCING BUFFER TO ELECTRICAL INSULATOR
- Patent Title (中): 应变诱导缓冲器对电绝缘子的转换
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Application No.: US15295938Application Date: 2016-10-17
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Publication No.: US20170040438A1Publication Date: 2017-02-09
- Inventor: ANNALISA CAPPELLANI , VAN H. LE , GLENN A. GLASS , KELIN J. KUHN , STEPHEN M. CEA
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/306 ; H01L21/762 ; H01L29/06 ; H01L21/02

Abstract:
Techniques are disclosed for converting a strain-inducing semiconductor buffer layer into an electrical insulator at one or more locations of the buffer layer, thereby allowing an above device layer to have a number of benefits, which in some embodiments include those that arise from being grown on a strain-inducing buffer and having a buried electrical insulator layer. For instance, having a buried electrical insulator layer (initially used as a strain-inducing buffer during fabrication of the above active device layer) between the Fin and substrate of a non-planar integrated transistor circuit may simultaneously enable a low-doped Fin with high mobility, desirable device electrostatics and elimination or otherwise reduction of substrate junction leakage. Also, the presence of such an electrical insulator under the source and drain regions may further significantly reduce junction leakage. In some embodiments, substantially the entire buffer layer is converted to an electrical insulator.
Public/Granted literature
- US09673302B2 Conversion of strain-inducing buffer to electrical insulator Public/Granted day:2017-06-06
Information query
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