发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
-
申请号： US15106918申请日： 2014-10-16
-
公开(公告)号： US20170040448A1公开(公告)日： 2017-02-09
- 发明人: Akitaka SOENO , Yuji FUKUOKA
- 申请人： Akitaka SOENO , Yuji FUKUOKA
- 申请人地址： JP Toyota-shi, Aichi-ken
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址： JP Toyota-shi, Aichi-ken
- 优先权： JP2013-267786 20131225
- 国际申请： PCT/JP2014/077497 WO 20141016
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66
摘要：
Described herein is a semiconductor device including a semiconductor substrate in which an element region and a termination region surrounding the element region are provided. The element region includes: a gate trench; a gate insulating film; and a gate electrode. The termination region includes: a plurality of termination trenches provided around the element region; an inner trench insulating layer located inside of each of the plurality of termination trenches; and an upper surface insulating layer located at an upper surface of the semiconductor substrate in the termination region. The upper surface insulating layer includes a first portion and a second portion having a thinner thickness than the first portion and located at a location separated from the element region than the first portion, and a gate wiring is located at an upper surface of the first portion and is not located at an upper surface of the second portion.
公开/授权文献
- US09722075B2 Semiconductor device 公开/授权日：2017-08-01
信息查询
IPC分类:
