发明申请
- 专利标题： METHODS FOR PRODUCING INTERCONNECTS IN SEMICONDUCTOR DEVICES
- 专利标题（中）： 在半导体器件中生产互连的方法
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申请号： US15243600申请日： 2016-08-22
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公开(公告)号： US20170047249A1公开(公告)日： 2017-02-16
- 发明人: Ismail T. Emesh , Roey Shaviv , Mehul Naik
- 申请人： APPLIED Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED Materials, Inc.
- 当前专利权人： APPLIED Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method for forming metallization in a workpiece includes electrochemically depositing a second metallization layer on the workpiece comprising a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first metallization layer disposed on the dielectric layer and having at least one microfeature comprising a recessed structure, wherein the first metallization layer at least partially fills a feature on the workpiece, where the first metallization layer is a cobalt or nickel metal layer, and wherein the second metallization layer is a cobalt or nickel metal layer that is different from the metal of the first metallization layer, electrochemically depositing a copper cap layer after filling the feature, and annealing the workpiece to diffuse the metal of the second metallization layer into the metal of the first metallization layer.