公开(公告)号：US11024537B2

公开(公告)日：2021-06-01

申请号：US16598878

申请日：2019-10-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Roey Shaviv ,  Ismail Emesh ,  Xikun Wang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3213 ,  H01L23/532

Abstract: Methods and apparatus for forming an interconnect, including: depositing a first barrier layer upon a top surface of a via and a top surface of a trench; filling the via with a first metal, wherein the first metal completely fills the via and forms a metal layer within the trench; etching the metal layer within the trench to expose dielectric sidewalls of the trench, a top surface of the via, and a dielectric bottom of the trench; depositing a second barrier layer upon the dielectric sidewalls, top surface of the via, and the dielectric bottom of the trench; and filling the trench with a second metal different than the first metal.

公开(公告)号：US09828687B2

公开(公告)日：2017-11-28

申请号：US14637316

申请日：2015-03-03

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  Ismail T. Emesh ,  Dimitrios Argyris ,  Serdar Aksu

IPC: H01L21/288 ,  H01L21/768 ,  C25D3/38 ,  H01L23/528 ,  C25D7/12 ,  H01L23/532 ,  C25D3/12 ,  C25D3/46 ,  C25D3/48 ,  C25D3/02

CPC classification number: C25D7/123 ,  C25D3/02 ,  C25D3/12 ,  C25D3/38 ,  C25D3/46 ,  C25D3/48 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 1 to about 6, and applying a cathodic potential in the range of about −0.5 V to about −4 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V.

公开(公告)号：US20170009368A1

公开(公告)日：2017-01-12

申请号：US15270937

申请日：2016-09-20

Applicant: APPLIED Materials, Inc.

Inventor： Paul R. McHugh ,  Gregory J. Wilson ,  Roey Shaviv

IPC: C25D17/00 ,  C25D17/12

CPC classification number: C25D17/008 ,  C25D5/00 ,  C25D17/001 ,  C25D17/007 ,  C25D17/12

Abstract: An electroplating apparatus has one or more membrane tube rings which act as electric field shields, to provide advantageous plating characteristics at the perimeter of a work piece. The membrane tube rings may be filled with fluids having different conductivity, to change the shielding effect as desired for electroplating different types of substrates. The membrane tube rings may optionally be provided in or on a diffuser plate in the vessel of the apparatus.

Abstract translation: 电镀设备具有一个或多个膜管环，其作为电场屏蔽，以在工件的周边提供有利的电镀特性。 膜管环可以填充具有不同导电性的流体，以根据需要改变电镀不同类型的基底的屏蔽效果。 膜管环可以可选地设置在装置的容器中的扩散器板中或其上。

公开(公告)号：US20160372369A1

公开(公告)日：2016-12-22

申请号：US15190755

申请日：2016-06-23

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv

IPC: H01L21/768 ,  H01L23/528 ,  H01L21/321 ,  H01L23/522 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L21/76882 ,  H01L21/0274 ,  H01L21/2885 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76822 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming an interconnect composed of metallized lines and vias in a workpiece includes forming metal lines in a workpiece, with the metal lines disposed in longitudinally spaced-apart line segments, the line segments spaced apart from each other end-to-end; and forming vias in a workpiece, wherein at least one end of a first formed metal line constrains one cross-sectional dimension of a second formed via, or wherein at least one end of a first formed via constrains one cross-sectional dimension of a second formed metal line.

Abstract translation: 在工件中形成由金属化线和通孔构成的互连的方法包括在工件中形成金属线，金属线设置在纵向间隔开的线段中，线段彼此间隔开端对端; 以及在工件中形成通孔，其中第一成形金属线的至少一端约束第二形成的通孔的一个横截面尺寸，或者其中第一形成的通孔的至少一个端部限制一个第二形成的通孔的一个横截面尺寸 形成金属线。

公开(公告)号：US09378976B2

公开(公告)日：2016-06-28

申请号：US14677673

申请日：2015-04-02

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv

IPC: H01L21/4763 ,  H01L21/44 ,  H01L23/52 ,  H01L21/311 ,  H01L21/768 ,  H01L21/321 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76882 ,  H01L21/0274 ,  H01L21/2885 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76822 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A conductive interconnect including trenches (110) and (186) and vias (202) are formed in a workpiece (100) by applying a dielectric film stack (120) over the workpiece, and thereafter applying photoresist (140) over the film stack. Trenches (142) are patterned in the photoresist, wherein the trenches are in segments disposed end-to-end to each other. The segments are longitudinally spaced apart from each other at locations where the vias (202) are to be located. The trenches are etched into the dielectric film stack, and then filled with conductive material to form metal line segments (186). Vias (192) are patterned in the gaps separating the adjacent ends of the longitudinally-related lines (186). The patterned vias are etched and then filled with a conductive material, with the ends of the adjacent line segments (186) serving to accurately locate the vias, in a direction along the lengths of the trenches.

Abstract translation: 通过在工件上施加电介质膜堆叠（120），然后在膜堆上施加光致抗蚀剂（140），在工件（100）中形成包括沟槽（110）和（186）和通孔（202）的导电互连。 沟槽（142）在光致抗蚀剂中图案化，其中沟槽处于彼此端对端设置的段中。 这些段在通孔（202）将位于的位置处彼此纵向间隔开。 将沟槽蚀刻到电介质膜堆叠中，然后用导电材料填充以形成金属线段（186）。 通孔（192）在分离纵向相关线（186）的相邻端的间隙中被图案化。 图案化的通孔被蚀刻，然后用导电材料填充，相邻的线段（186）的端部用于在沿着沟槽的长度的方向上精确地定位通孔。

公开(公告)号：US20160126104A1

公开(公告)日：2016-05-05

申请号：US14527671

申请日：2014-10-29

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  Ismail T. Emesh

IPC: H01L21/285

CPC classification number: H01L21/76843 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  H01L21/02068 ,  H01L21/6723 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873

Abstract: In one embodiment of the present disclosure, a method for electrochemical deposition on a workpiece includes (a) obtaining a workpiece including a feature; (b) depositing a first conductive layer in the feature; (c) moving the workpiece to an integrated electrochemical deposition plating tool configured for hydrogen radical H* surface treatment and electrochemical deposition; (d) treating the first conductive layer using a hydrogen radical H* surface treatment in a treatment chamber of the plating tool to produce a treated first conductive layer; and (e) maintaining the workpiece in the same plating tool and depositing a second conductive layer in the feature on the treated first conductive layer in an electrochemical deposition chamber of the plating tool.

Abstract translation: 在本公开的一个实施例中，用于在工件上进行电化学沉积的方法包括（a）获得包括特征的工件; （b）在所述特征中沉积第一导电层; （c）将工件移动到配置用于氢自由基H *表面处理和电化学沉积的集成电化学沉积电镀工具; （d）在所述电镀工具的处理室中使用氢自由基H *表面处理处理所述第一导电层，以产生经处理的第一导电层; 以及（e）将所述工件保持在相同的电镀工具中，并且在所述电镀工具的电化学沉积室中在所处理的第一导电层上的特征中沉积第二导电层。

公开(公告)号：US20150348837A1

公开(公告)日：2015-12-03

申请号：US14637290

申请日：2015-03-03

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  Ismail T. Emesh ,  Dimitrios Argyris ,  Serdar Aksu

IPC: H01L21/768

CPC classification number: C25D7/123 ,  C25D3/02 ,  C25D3/38 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 6 to about 11 and applying a cathodic potential in the range of about −1 V to about −6 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V.

Abstract translation: 根据本公开的一个实施例，用于在工件上的反应性金属膜上沉积金属的方法包括使用具有至少一个电镀金属离子的电镀电解质在形成在工件上的籽晶层上电化学沉积金属化层， pH范围为约6至约11，并施加约-1V至约-6V范围内的阴极电势。工件包括设置在种子层和工件的电介质表面之间的阻挡层，阻挡层包括 具有比0V低的标准电极电势的第一金属，并且种子层包括具有比0V更正的标准电极电位的第二金属。

公开(公告)号：US20150270133A1

公开(公告)日：2015-09-24

申请号：US14219940

申请日：2014-03-19

Applicant: APPLIED Materials, Inc.

Inventor： John W. Lam ,  Ismail Emesh ,  Roey Shaviv

IPC: H01L21/288 ,  H01L21/324 ,  C25D7/12 ,  H01L21/768

CPC classification number: H01L21/2885 ,  C23C18/1653 ,  C25D3/12 ,  C25D5/10 ,  C25D5/14 ,  C25D5/50 ,  C25D7/00 ,  C25D7/123 ,  H01L21/3247 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electrochemical process for applying a conductive film onto a substrate having a seed layer includes placing the substrate into contact with an electrochemical plating bath containing cobalt or nickel, with the plating bath having pH of 4.0 to 9.0. Electric current is conducted through the bath to the substrate. The cobalt or nickel ions in the bath deposit onto the seed layer. The plating bath may contain cobalt chloride and glycine. The electric current may range from 1-50 milli-ampere per square cm. After completion of the electrochemical process, the substrate may be removed from the plating bath, rinsed and dried, and then annealed at a temperature of 200 to 400 C to improve the material properties and reduce seam line defects. The plating and anneal process may be performed through multiple cycles.

公开(公告)号：US20140287577A1

公开(公告)日：2014-09-25

申请号：US14211602

申请日：2014-03-14

Applicant: APPLIED Materials, Inc.

Inventor： Ismail T. Emesh ,  Roey Shaviv ,  Mehul Naik

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/76849 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for producing interconnects on a workpiece includes obtaining a workpiece substrate having a feature, depositing a conductive layer in the feature, to partially or fully fill the feature, depositing a copper fill to completely fill the feature if the feature is partially filled by the conductive layer, applying a copper overburden, thermally treating the workpiece, and removing the overburden to expose the substrate and the metalized feature.

Abstract translation: 一种用于在工件上制造互连件的方法包括获得具有特征的工件衬底，在特征中沉积导电层以部分或全部填充该特征，如果该特征部分地由 导电层，施加铜覆盖层，热处理工件，以及去除覆盖层以暴露衬底和金属化特征。

公开(公告)号：US20250029874A1

公开(公告)日：2025-01-23

申请号：US18909047

申请日：2024-10-08

Applicant: Applied Materials, Inc.

Inventor： Roey Shaviv ,  Suketu Arun Parikh ,  Feng Chen ,  Lu Chen

IPC: H01L21/768 ,  H01L21/02

Abstract: Provided are methods of forming vias with decreased resistance by selectively depositing a barrier layer on an insulating layer and not on a metallic surface. Some embodiments of the disclosure utilize a planar hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked insulating surfaces.