Invention Application
US20170047358A1 SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
审中-公开
半导体器件和剥离方法及制造半导体器件的方法
- Patent Title: SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件和剥离方法及制造半导体器件的方法
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Application No.: US15335854Application Date: 2016-10-27
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Publication No.: US20170047358A1Publication Date: 2017-02-16
- Inventor: Toru TAKAYAMA , Junya MARUYAMA , Mayumi MIZUKAMI , Shunpei YAMAZAKI
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Priority: JP2001-216018 20010716; JP2001-299620 20010928
- Main IPC: H01L27/12
- IPC: H01L27/12

Abstract:
The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.
Public/Granted literature
- US10586816B2 Semiconductor device and peeling off method and method of manufacturing semiconductor device Public/Granted day:2020-03-10
Information query
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