Invention Application
- Patent Title: ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Patent Title (中): 隔离结构及其制造方法
-
Application No.: US14859348Application Date: 2015-09-20
-
Publication No.: US20170047397A1Publication Date: 2017-02-16
- Inventor: Shih-Yin Hsiao , Kuan-Liang Liu
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: TW104126006 20150810
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/762
Abstract:
A method for fabricating isolation device is disclosed. The method includes the steps of: providing a substrate; forming a shallow trench isolation (STI) in the substrate, the STI includes a first STI and a second STI, and the first STI surrounds a first device region and the second STI surrounds a second device region; forming a first doped region between and contact the first STI and the second STI; and forming a first gate structure on the first doped region, the first STI and the second STI.
Public/Granted literature
- US09647060B2 Isolation structure and method for fabricating the same Public/Granted day:2017-05-09
Information query
IPC分类:
