HIGH VOLTAGE SEMICONDUCTOR DEVICE

    公开(公告)号:US20210119014A1

    公开(公告)日:2021-04-22

    申请号:US17117090

    申请日:2020-12-09

    Abstract: A high voltage semiconductor device and a manufacturing method thereof are provided in the present invention. A recess is formed in a semiconductor substrate, and a gate dielectric layer and a main gate structure are formed in the recess. Therefore, the high voltage semiconductor device formed by the manufacturing method of the present invention may include the main gate structure lower than a top surface of an isolation structure formed in the semiconductor substrate. Problems about integrated manufacturing processes of the high voltage semiconductor device and other kinds of semiconductor devices when the gate structure is relatively high because of the thicker gate dielectric layer required in the high voltage semiconductor device may be improved accordingly.

    Transistor structure
    6.
    发明授权

    公开(公告)号:US11088027B2

    公开(公告)日:2021-08-10

    申请号:US17011270

    申请日:2020-09-03

    Abstract: A transistor structure includes a source region and a drain region disposed in a substrate, extending along a first direction. A polysilicon layer is disposed over the substrate, extending along a second direction perpendicular to the first direction, wherein the polysilicon layer includes a first edge region, a channel region and a second edge region formed as a gate region between the source region and the drain region in a plane view. The polysilicon layer has at least a first opening pattern at the first edge region having a first portion overlapping with the gate region; and at least a second opening pattern at the second edge region having a second portion overlapping with the gate region.

    High voltage semiconductor device and manufacturing method thereof

    公开(公告)号:US10903334B2

    公开(公告)日:2021-01-26

    申请号:US16813768

    申请日:2020-03-10

    Abstract: A high voltage semiconductor device and a manufacturing method thereof are provided in the present invention. A recess is formed in a semiconductor substrate, and a gate dielectric layer and a main gate structure are formed in the recess. Therefore, the high voltage semiconductor device formed by the manufacturing method of the present invention may include the main gate structure lower than a top surface of an isolation structure formed in the semiconductor substrate. Problems about integrated manufacturing processes of the high voltage semiconductor device and other kinds of semiconductor devices when the gate structure is relatively high because of the thicker gate dielectric layer required in the high voltage semiconductor device may be improved accordingly.

    TRANSISTOR STRUCTURE
    10.
    发明申请

    公开(公告)号:US20210335669A1

    公开(公告)日:2021-10-28

    申请号:US17367150

    申请日:2021-07-02

    Abstract: A transistor structure includes a source region and a drain region disposed in a substrate, extending along a first direction. A polysilicon layer is disposed over the substrate, extending along a second direction perpendicular to the first direction, wherein the polysilicon layer includes a first edge region, a channel region and a second edge region formed as a gate region between the source region and the drain region. The polysilicon layer has at least a first opening pattern at the first edge region having a first portion overlapping the gate region; and at least a second opening pattern at the second edge region having a second portion overlapping the gate region.

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