Invention Application
US20170047404A1 SEMICONDUCTOR STRUCTURE WITH MULTILAYER III-V HETEROSTRUCTURES
有权
具有多层III-V异质结构的半导体结构
- Patent Title: SEMICONDUCTOR STRUCTURE WITH MULTILAYER III-V HETEROSTRUCTURES
- Patent Title (中): 具有多层III-V异质结构的半导体结构
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Application No.: US14825949Application Date: 2015-08-13
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Publication No.: US20170047404A1Publication Date: 2017-02-16
- Inventor: Steven BENTLEY , Rohit GALATAGE
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: US KY Grand Caymay
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: US KY Grand Caymay
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/66 ; H01L29/165 ; H01L29/78 ; H01L29/205
Abstract:
The source/drain of a fully III-V semiconductor or Si-based transistor includes a bottom barrier layer that may be lattice matched to the channel, a lower layer of a wide bandgap III-V material and a top layer of a comparatively narrow bandgap III-V material, with a compositionally graded layer between the lower layer and top layer gradually transitioning from the wide bandgap material to the narrow bandgap material.
Public/Granted literature
- US09577042B1 Semiconductor structure with multilayer III-V heterostructures Public/Granted day:2017-02-21
Information query
IPC分类:
