Invention Application
US20170053986A1 Integrated Structures Containing Vertically-Stacked Memory Cells
有权
包含垂直堆叠的存储单元的集成结构
- Patent Title: Integrated Structures Containing Vertically-Stacked Memory Cells
- Patent Title (中): 包含垂直堆叠的存储单元的集成结构
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Application No.: US14827695Application Date: 2015-08-17
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Publication No.: US20170053986A1Publication Date: 2017-02-23
- Inventor: Haitao Liu , Chandra Mouli , Sergei Koveshnikov , Dimitrios Pavlopoulos , Guangyu Gavin Huang
- Applicant: Micron Technology, Inc.
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/165 ; H01L27/115
Abstract:
Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.
Public/Granted literature
- US09761599B2 Integrated structures containing vertically-stacked memory cells Public/Granted day:2017-09-12
Information query
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