公开(公告)号：US09761599B2

公开(公告)日：2017-09-12

申请号：US14827695

申请日：2015-08-17

Applicant: Micron Technology, Inc.

Inventor： Haitao Liu ,  Chandra Mouli ,  Sergei Koveshnikov ,  Dimitrios Pavlopoulos ,  Guangyu Gavin Huang

IPC: H01L27/115 ,  H01L29/792 ,  H01L27/11556 ,  H01L21/28 ,  H01L27/11582

CPC classification number: H01L27/11556 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11582

Abstract: Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.

公开(公告)号：US20170053986A1

公开(公告)日：2017-02-23

申请号：US14827695

申请日：2015-08-17

Applicant: Micron Technology, Inc.

Inventor： Haitao Liu ,  Chandra Mouli ,  Sergei Koveshnikov ,  Dimitrios Pavlopoulos ,  Guangyu Gavin Huang

IPC: H01L29/10 ,  H01L29/165 ,  H01L27/115

CPC classification number: H01L27/11556 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11582

Abstract: Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.

Abstract translation: 一些实施例包括具有交替介电水平和导电水平的叠层并且在导电水平内具有垂直堆叠的存储器单元的集成结构。 一个开口延伸穿过堆叠。 通道材料在开口内并沿着存储单元。 至少一些通道材料含有锗。