发明申请
- 专利标题： SUPERJUNCTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 超级半导体器件及其制造方法
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申请号： US15242018申请日： 2016-08-19
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公开(公告)号： US20170054009A1公开(公告)日： 2017-02-23
- 发明人: Kwang-won LEE , Hye-min KANG , Jae-gil LEE
- 申请人： FAIRCHILD KOREA SEMICONDUCTOR LTD.
- 优先权： KR10-2015-0117345 20150820
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/10 ; H01L21/324 ; H01L29/36 ; H01L29/66 ; H01L21/266
摘要：
A superjunction semiconductor device includes a first semiconductor layer doped with a first conductivity type; an active region formed on the first semiconductor layer, the active region including a drift layer; and a termination region disposed to surround the active region, the termination region including a lower edge region disposed on a side surface of the drift layer and an upper edge region disposed on the lower edge region, wherein the upper edge region includes a lower charge balance region disposed on the lower edge region, the lower charge balance region having a second conductivity type different from the first conductivity type, and an upper charge balance region disposed on the lower charge balance region, the upper charge balance region having the first conductivity type.
公开/授权文献
- US09887280B2 Superjunction semiconductor device 公开/授权日：2018-02-06
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