Invention Application
US20170060282A1 METHOD OF SELECTIVELY ETCHING A METAL LAYER FROM A MICROSTRUCTURE
审中-公开
从微结构中选择性地蚀刻金属层的方法
- Patent Title: METHOD OF SELECTIVELY ETCHING A METAL LAYER FROM A MICROSTRUCTURE
- Patent Title (中): 从微结构中选择性地蚀刻金属层的方法
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Application No.: US15120576Application Date: 2015-01-30
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Publication No.: US20170060282A1Publication Date: 2017-03-02
- Inventor: Muthu Sebastian
- Applicant: 3M INNOVATIVE PROPERTIES COMPANY
- International Application: PCT/US2015/013676 WO 20150130
- Main IPC: G06F3/041
- IPC: G06F3/041 ; H05K3/06 ; C23F1/32
Abstract:
The invention relates to a method of etching a portion of a metal layer of a microstructure comprised of the metal layer disposed on a transparent conducting oxide (TCO) layer, and in particular, to selectively etching the portion of the metal layer and not the TCO layer.
Information query
