Invention Application
US20170060463A1 DATA STORAGE HAVING RECOVERY FUNCTION FOR THRESHOLD VOLTAGE DISTRIBUTION CHANGE OF MEMORY CELLS DUE TO APPLYING SURFACE MOUNTING TECHNOLOGY AND OPERATING METHOD 有权
具有恢复功能的数据存储对应用表面安装技术和操作方法的存储器电池的阈值电压分配更改

  • Patent Title: DATA STORAGE HAVING RECOVERY FUNCTION FOR THRESHOLD VOLTAGE DISTRIBUTION CHANGE OF MEMORY CELLS DUE TO APPLYING SURFACE MOUNTING TECHNOLOGY AND OPERATING METHOD
  • Patent Title (中): 具有恢复功能的数据存储对应用表面安装技术和操作方法的存储器电池的阈值电压分配更改
  • Application No.: US15205578
    Application Date: 2016-07-08
  • Publication No.: US20170060463A1
    Publication Date: 2017-03-02
  • Inventor: In Bo ShimJae-Sang YunDoo-Jin YiYoung Joon Jang
  • Applicant: Samsung Electronics Co., Ltd.
  • Priority: KR10-2015-0118993 20150824
  • Main IPC: G06F3/06
  • IPC: G06F3/06 G11C16/10 G11C16/34 G11C16/04
DATA STORAGE HAVING RECOVERY FUNCTION FOR THRESHOLD VOLTAGE DISTRIBUTION CHANGE OF MEMORY CELLS DUE TO APPLYING SURFACE MOUNTING TECHNOLOGY AND OPERATING METHOD
Abstract:
Methods of programming firmware in a data storage device include pre-programming memory cells included in at least one nonvolatile memory of a plurality of nonvolatile memories using a first verification voltage higher than a first reference voltage before a surface mounting technology is applied to the nonvolatile memories.
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